top of page

We have developed multiple versions of PCB-based IPT and CPT coils for megahertz-frequency WPT. The parameters of these coils have been optimized using advanced algorithms to ensure high efficiency and low costs, tailored to specific requirements regarding resonant frequency, size, and materials.

Power Electronics

We are at the forefront of developing high-frequency, high-power AC-DC and DC-AC converters, as well as innovative switched-capacitor-based DC-DC converters featuring SIMO and MISO configurations. By leveraging cutting-edge wide-bandgap semiconductors and integrating advanced AI technologies, we are continuously pushing the boundaries of power converter design to enhance the performance and efficiency of power electronics systems.

AC-DC Inverters

50MHz Inverter.jpg

Device: GaN EPC2038 (EPC)

Specifications: 20V/250V

Power: 7.8W@50MHz

Frequency: 50MHz

VHF Inverter

Parallel-GaN Inverter GS66508T.png

Parallel-GaN Inverter

Device: GaN FET GS66508T (Infineon)

Specifications: 650V/50mΩ/30A

Power: 3.5kW@6.78MHz&500V

Efficiency: 98.1%

Inverter Waveform.jpg
GaN Inverter GS66508T.png

Device: GaN FET GS66508T (Infineon)

Specifications: 650V/50mΩ/30A

Power: 2.8kW@6.78MHz&400V

Efficiency: 97.6%

SiC Inverter C3M0060065K.png

Device: SiC C3M0060065K (Wolfspeed)

Specifications: 650V/60mΩ/37A

Power: 4kW@4MHz&500V

Efficiency: 95.2%

Device: GaN TP65H070G4PS (Transphorm, Inc.)

Specifications: 650V/72mΩ/29A

Power: 2.2kW@6.78MHz&400V

Efficiency: 97.1%

DC-DC Converters

SIMO DC-DC.png

Single-Input-Multiple-Output, 48V/1V

Device: MOSFET BSC009NE2LS5 (Infineon)

Specifications: 30V/0.9mΩ/100A

Power: 100W@100kHz

Efficiency: 92.26%

SIMO Waveform.jpg
MISO DC-DC.png

Multiple-Input-Single-Output, 1V/48V

Device: GaN MOSFET GS61008P (Infineon)

Specifications: 100V/7mΩ/90A

Power: 100W@100kHz

Efficiency: 94.71%

MISO Waveform.jpg

Yun Yang - Nanyang Technological University © All rights reserved.

bottom of page